Uniaxial compression effects on conduction mechanisms in p-type gallium antimonide

Self- and Zinc Diffusion in Gallium Antimonide

Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide

The majority electron density as a function of the Fermi energy is calculated in zinc blende, n-type GaSb for donor densities between 10(16) cm(-3) and 10(19) cm(-3). These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at Γ, L, and X and one equivalent valence band at Γ) of GaSb. Our calculations assume parabolic densities ...

P-doping mechanisms in catalyst-free gallium arsenide nanowires.

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incor...

Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition

Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition

Cooperative mechanisms of fast-ion conduction in gallium-based oxides with tetrahedral moieties.

The need for greater energy efficiency has garnered increasing support for the use of fuel-cell technology, a prime example being the solid-oxide fuel cell. A crucial requirement for such devices is a good ionic (O(2-) or H+) conductor as the electrolyte. Traditionally, fluorite- and perovskite-type oxides have been targeted, although there is growing interest in alternative structure types for...